ESCO-TDS1200II IR BGM — The Next Stage of Thermal Desorption Analysis.

The ESCO-TDS1200II IR BGM revolutionizes Thermal Desorption Spectroscopy (TDS) by introducing direct in-situ silicon temperature measurement via Band-Gap Monitoring (BGM). By optically tracking the temperature-dependent band gap of silicon in real time, it eliminates offset errors inherent in conventional thermocouple measurement, enabling unprecedented temperature accuracy and reproducible feedback control.

Key Features of ESCO-TDS1200II IR BGM:

• Direct Silicon-Temperature Determination (BGM): Real-time optical monitoring (75–500 °C) ensures precise heating-rate control and eliminates complex calibration.

• Temperature-Resolved Desorption Analysis: Clearly discriminates between weakly physisorbed water (100–200 °C) and strongly bound water-related species (>300 °C) on oxide films (e.g., SiO2, IGZO).

• Rapid IR-Lamp Heating & High Throughput: Supports fast ramping (60 °C/min) with 20-minute run times and short wait times (~1 hour cooling), ideal for R&D and screening.

• Wide Temperature Range: Retains thermocouple-based control up to 1200 °C while adding BGM capabilities for flexible measurements.

[Advanced Applications & Technical Brochure]

The advanced measurement capabilities of the ESCO-TDS1200II IR BGM—including desorption behavior of water adsorbed on oxide-film surfaces and thermal stability of IGZO thin films—are highly evaluated in the semiconductor industry and will be featured at the Advanced Semiconductor Manufacturing Conference (ASMC) 2026.

Please download the attached Technical Brochure for detailed specifications, system schematics, and comprehensive measurement data.